1 power transistors 2sd1270 silicon npn epitaxial planar type for power switching complementary to 2sb0945 (2sb945) features low collector to emitter saturation voltage v ce(sat) satisfactory linearity of foward current transfer ratio h fe large collector current i c full-pack package which can be installed to the heat sink with one screw absolute maximum ratings (t c =25?c) electrical characteristics (t c =25?c) * h fe2 rank classification rank r q p h fe2 60 to 120 90 to 180 130 to 260 unit: mm 1:base 2:collector 3:emitter to?20 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note: ordering can be made by the common rank (pq rank h fe = 90 to 260) in the rank classification. parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = 100v, i e = 0 v eb = 5v, i c = 0 i c = 10ma, i b = 0 v ce = 2v, i c = 0.1a v ce = 2v, i c = 2a i c = 4a, i b = 0.2a i c = 4a, i b = 0.2a v ce = 10v, i c = 0.5a, f = 10mhz i c = 2a, i b1 = 0.2a, i b2 = ?0.2a, v cc = 50v min 80 45 60 typ 30 0.5 1.5 0.15 max 10 50 260 0.5 1.5 unit a a v v v mhz s s s parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 130 80 7 10 5 40 2 150 ?5 to +150 unit v v v a a w ?c ?c t c =25 c ta=25 c note.) the part number in the parenthesis shows conventional part number.
2 power transistors 2sd1270 p c ?a i c ? ce v ce(sat) ? c v be(sat) ? c h fe ? c f t ? c c ob ? cb t on , t stg , t f ?i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature ta ( ? c ) collector power dissipation p c ( w ) 06 5 4 13 2 0 6 5 4 3 2 1 i b =100ma 70ma 50ma 40ma 30ma 20ma 10ma t c =25 ? c collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =20 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =2v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 05 4 13 2 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =10 (i b1 = i b2 ) v cc =50v t c =25 ? c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25 ? c i cp i c t=0.5ms 10ms 1ms dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sd1270 r th(t) ? 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 3 10 2 (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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